TWHM 2017
Join NTT-AT at TWHM 2017(12th Topical Workshop on Heterostructure Microelectronics).
This year at TWHM 2017 (12th Topical Workshop on Heterostructure Microelectronics) NTT-AT will showcase 'GaN HEMT epiwafers'.
We look forward to seeing you in TWHM 2017 (12th Topical Workshop on Heterostructure Microelectronics).
Please stop by our booth.
About TWHM 2017
| Date | August 28-31, 2017 |
|---|---|
| Location | Hotel Kyocera, Kirishima, Kyushuu, Japan |
| Website | http://www.rciqe.hokudai.ac.jp/twhm2017/  |
Details
Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies.
NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.
