COMPOUND SEMICONDUCTOR WEEK 2018

Join NTT-AT at COMPOUND SEMICONDUCTOR WEEK 2018.

This year at COMPOUND SEMICONDUCTOR WEEK 2018 NTT-AT will showcase GaN HEMT epiwafers.
We look forward to seeing you in COMPOUND SEMICONDUCTOR WEEK 2018.
Please stop by our booth.

About COMPOUND SEMICONDUCTOR WEEK 2018

Date	May 29 - June 1, 2018
Location	Massachusetts Institute of Technology, Cambridge, MA, USA
Website	https://www.csw2018.org/

Details

article on exhibition	'GaN HEMT epiwafers' Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies. NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.

article on exhibition

'GaN HEMT epiwafers'
Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies.
NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.