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IMS 2018

IMS 2018

Join NTT-AT at IMS 2018.

This year at IMS 2018 NTT-AT will showcase 'GaN HEMT epiwafers', etc.
We look forward to seeing you in IMS 2018.
Please stop by our booth.

About IMS 2018

Date June 10-15, 2018
Location Pennsylvania Convention Center
Website https://ims2018.org/


article on exhibition
  • 'GaN HEMT epiwafers'
    Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies. 
    NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.
  • 'HIREC'
    HIREC is a super hydrophobic water repellent coating material (similar to paint) developed by NTT to protect its critical telecommunications equipment from snow, ice, and rain interference. The coating creates a contact angle of 150 degrees between the surface and the water droplet, virtually eliminating the problems of rain fade and rain, snow, and ice attenuation. This technology has been developed into several products that can be used in a variety of ways, and we are working on creating more.

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