GaN HEMT epiwafers
GaN HEMT epiwafers

GaN HEMT epiwafers with low leakage current based on our original buffer growth technique

Benefits 

Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics.  The products are used worldwide by major cutting-edge semiconductor device companies.

NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer. 

High uniformity among wafers by precise control of growth conditions 

High breakdown voltage and low leakage current by unique buffer layer growth technology

Excellent two-dimensional electron gas by precise control of growth conditions

 
Due to its high quality, this product is well regarded by our customers worldwide.

Gan HEMT epiwafers Inquiry

Features

Leakage Current Density

GaN Epiwafer_Leak current density

NTT-AT's competitive edge

Able to provide various kinds of substrate

Si Sapphire SiC GaN
2-6" 2-4" 2-4" 2"

Very flexible to meet wide range of required quantity

Able to provide 6 inch GaN on Silicon

Able to provide InAlN HEMT structure

Able to provide 4 inch GaN on SiC and 6 inch GaN on Si

Benefits of using GaN

PAGETOP

Specifications / Details

AlGaN/GaN HEMT epi structure (example)

Cap Layer
Material GaN
Doping Doped or un-doped
Thickness 2 (nm)
Barrier
Material AlGaN
Al content ~25 (%)
Thickness ~ 20 (nm)
Channel
Material GaN
Thickness ~300 (nm)
Buffer
Doping C-doping
Thickness 1- 4 (μm)
Remarks
1) The thickness of cap layer can be adjusted according to the requirements.
2) The thickness of barrier layer and Al composition can be adjusted according to the requirements.
3) The AlN spacer layer can be inserted as well
Features
Sheet resistance: ~300 Ohm/sq. 1), ~400 Ohm/sq. 2)
1) with AlN spacer, 2) without AlN spacer
Sheet carrier density:~ 1013 (cm-2)
Electron mobility:> ~ 2000 cm2/Vs
Breakdown voltage3) :> 200 V (for RF), ~ 1000 V (for power)
3)influenced by device structure

Comparison with other companies products

GaN devices have higher breakdown voltage and higher power efficiency compared with Si devices, and are capable of reducing the size of high-power systems and RF systems.  
We accept GaN epitaxial wafer orders for small volume prototyping
Mass production is available based on our partnership with Mitsubishi Chemical Corporation.
Epitaxial growth on Si, SiC, Sapphire and GaN substrates is available.
NTT-AT also provides process services (device prototyping including MEMS devices and etching services) and material analysis services.

Sales history

Over the past 10 years, NTT-AT has sold GaN epitaxial wafers to more than 100 customers including enterprises, research institutes, and universities.

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