Bringing environmentally friendly GaN power devices to reality
Power devices using GaN are expected to be the "green" devices that will support the low carbon society of the future.
Through its GaN epitaxial wafer technology, NTT-AT is helping to bring an early realization of an energy saving generation.
The GaN power devices as the next generation power devices enable high output, high voltage, high frequency, and low loss exceeding the limitations of Si power devices.
|Doping||Doped or un-doped|
|Al content||~25 (%)|
|Thickness||~ 20 (nm)|
|Thickness||1- 4 (μm)|
1) The thickness of cap layer can be adjusted according to the requirements.
2) The thickness of barrier layer and Al composition can be adjusted according to the requirements.
3) The AlN spacer layer can be inserted as well
Sheet resistance: ~300 Ohm/sq. 1), ~400 Ohm/sq. 2)
1) with AlN spacer, 2) without AlN spacer
Sheet carrier density:~ 1013 (cm-2)
Electron mobility:> ~ 2000 cm2/Vs
Breakdown voltage3) :> 200 V (for RF), ~ 1000 V (for power)
3)influenced by device structure