Etching
NTT-AT provides Dry etching services (e.g. F-based gas and Halogen-based gas) and Wet etching services (e.g. H2SO4-based, HCl-based, HF-based etchant).
Specifications
| Etching type |
Available gas / chemicals |
Available wafers / materials |
Available sizes |
| Dry etching |
F-based, halogen-based |
III-V compounds, Si, insulating-film, quartz, sapphire, etc |
2, 3 inch phi, non-standard size wafer |
| Wet etching |
H2SO4-based, HCl-based, HF-based |
III-V compounds, Si, insulating-film, quartz, sapphire, etc |
2, 3, 4 inch phi, non-standard size wafer |
Options
- Pattern evaluation method is selectable from the following equipment :
- Optical microscope
- Critical Dimension (CD)-Scanning Electron Microscope (SEM)
- Cross-Section (CS)-SEM
- Descuming and surface cleaning, etc are available.
- Two-layer resist patterning is available. (only available with the stepper and the contact aligner)
- We also provide etching services and metal deposition services using the formed resist patterns.
Examples
| ex1) |
L & S pattern on GaAs substrate processed by our dry etching equipment |
| ex2) |
10micron depth pattern on Si substrate processed by our dry etching equipment |
(height = 10micron) |
| ex3) |
Deep groove pattern on Si substrate processed by our dry etching equipment |
| ex4) |
8 micron depth pattern on quartz substrate processed by our dry etching equipment |
(height = 8micron) |
| Notes : |
This content may be subject to change without notice.
These stated pattern features and structures are representative and not guaranteed.
Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
