Fine patterning
NTT-AT provides resist patterning services using Electron Beam (EB) writing equipment, Reduced projection exposure equipment (i-line stepper), laser writing equipment, and Contact aligner.
Specifications
| Equipment |
Minimum pattern size |
Available wafers |
Available sizes |
| Electron beam writing |
0.1micron Line&Space |
GaAs,InP,Si,quartz |
2,3,4,6inch phi,non-standard size wafer |
| i-line stepper |
0.5micron |
GaAs,InP,Si,etc |
2,3inch phi |
| Contact aligner |
2.0micron |
GaAs,InP,Si,quartz |
2,3inch phi,non-standard size wafer |
| Laser writing |
1.0micron |
GaAs,InP,Si,etc |
2 inch phi to 8 inch square |
Features
- EB writing equipment runs directly with CAD data and does not require photomasks.
- EB writing with high accelerating voltage can form high accuracy patterns.
- Please feel free to specify your required resist type and resist thickness if you have any.
Options
- Pattern evaluation method is selectable from the following equipment :
- Optical microscope
- Critical Dimension (CD)-Scanning Electron Microscope (SEM)
- Cross-Section (CS)-SEM
- Descuming and surface cleaning, etc are available.
- Two-layer resist patterning is available. (only available with the stepper and the contact aligner)
- We also provide etching services and metal deposition services using the formed resist patterns.
Example
SEM images of resist patterns
| ex1) |
0.1micron L & S with EB writing |
| ex2) |
0.5micron L & S with i-line stepper |
| ex3) |
hemispherroidal pattern |
| Notes : |
This content may be subject to change without notice.
These stated pattern features and structures are representative and not guaranteed.
Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
