Fine patterning
- Patterning with EB lithography, stepper and contact lithopgraphy
- Resist pattern etching and metal process are also available
Resist coating / development
| Resist coating | Auto coating Manual coating with spinner |
|---|---|
| Development | Auto development Manual development with dipping method (Dip) |
| Resist removal | Oxgen plasma, asher (resist ashing process) Resist peeling liquid (remover) |
- Patterning method and etching method will be determined based on resist type, resist thickness and baking conditions. Please contact us for the details.
- After resist removal, other cleaning process are also available
Lithography
| Equipment | Minimum pattern size | Available wafers | Available sizes |
|---|---|---|---|
| Electron beam writing | 70nm L&S, 50nm space, etc. | GaAs, InP, Si, Quartz, Sapphire, GaN, SiC | 2 - 4 and 6 inch phi, non-standard size wafer |
| i-line stepper | 0.5µm | 2, 3 inch phi | |
| Contact aligner | 2.0µm | 2, 3 inch phi, non-standard size wafer |
Advantages
- Able to produce reticle with CAD data (layout data)
- EB lithography enables patterning on resist directly based on CAD data
- Ultra fine patterns are available with highly-accelerated powered EB lithography.
- You can designate the resist for the patterning
- You can specify required pattern evaluation method, i.e. optical microscope observation, SEM and cross-section SEM.
- Front end-process and post process (scumming, surface cleaning, etc.) available
- Patterning with two-resist layer (lift-off)
Example
EB writing
 |
 |
|---|---|
| high aspect ration 70nm L&S | 200nm dot |
Stepper
 |
 |
|---|---|
| 500nm L&S | Curved waveguide |
| Notes : | This content may be subject to change without notice. These stated pattern features and structures are representative and not guaranteed. Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
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