Front-end processing (Wafer cleaning, Oxidation, Annealing, Resist processing)

Wafer cleaning

NTT-AT provides wafer cleaning services by using Organic solvents and Acid / Alkali solvents.

Organic solvents	Acetone cleaning, Ethanol cleaning
Acid / Alkali solvents	H₂SO₄/H₂O₂, HCl/H₂O₂, NH₃/H₂O₂, Buffered HF, etc

Wafer cleaning with Acid / Alkali solvents is intended for the removal of the unnecessary film left on the wafer, not for the removal of dust or other contamination of the wafer.
Wafers are processed by the immersion-cleaning method and are dried by the spin-dry method.

Oxidation and Annealing

NTT-AT provides Oxidation and Annealing services using electric furnace.

Oxidation	Wet oxidation, Dry oxidation
Annealing	High temperature annealing (800-1000degC), Low temperature annealing (around 400degC)

Annealing is processed in the presence of Nitrogen.

Resist processing

NTT-AT provides Resist coating and Development services after the exposure process and Resist removal services.

Resist coating	Spin-coating (resist thickness : up to 1um), Pre-bake
Development	Immersion development, Post-bake
Resist removal	O₂ plasma asher, Resist remover

Conditions of resist coating (resist type, coated thickness, and bake conditions) are determined in consultation with each customer, because they depend on the patterning method and the etching method.
NTT-AT also conducts the resist removal and the subsequent cleaning services of wafers according to our customer's requirements.

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Notes :

This content may be subject to change without notice.
These stated pattern features and structures are representative and not guaranteed.
Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc.

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