Insulating film deposition
Various types of insulating film with plasma CVD, sputtering and EB evaporation
Features
- SiO2 layer and SiNx layer can be deposited at the temperature of 200°C and 300°C with plasma CVD
- AR layer with highly controlled depostion technique and multi-layered HR layer with sputtering are also available
(Depending on required wavelength, low reflecting film is also available.)
Specifications
| Equipment / method | Available insulating films | Available wafers | Available sizes |
|---|---|---|---|
| Plasma CVD | SiNx, SiO2 | GaAs, InP, Si, Quartz, Sapphire, GaN, SiC | 2 - 4 inch phi, non-standard size wafer |
| Sputtering | SiO2, TiO2, Al2O3, a-Si | ||
| Electron beam evaporation | SiO2, TiO2, Al2O3 |
Example :
Desymmetrization of the resonator end face for semiconductor lasers
<< Reflectivity of AR layer and HR layer of InP monitor substrate >>
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| Reflectivity of AR |
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| Reflectivity of HR |
| Notes : | This content may be subject to change without notice. These stated pattern features and structures are representative and not guaranteed. Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
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