Insulating film deposition
NTT-AT provides various types of insulating film deposition services by using our equipment, such as Plasma CVD, Sputtering, and EB evaporation. We also provide organic film coating services.
Specifications
| Equipment/method | Available insulating films | Available wafers | Available sizes |
|---|---|---|---|
| Plasma CVD | SiNx,SiO2 | GaAs,InP,Si,SiC,GaN | 2,3,4inch phi, non-standard size wafer |
| Sputtering | SiO2, TiO2 | GaAs,InP,Si,SiC,GaN | 2,3,4,6inch phi,non-standard size wafer |
| Electron beam evaporation | SiO2, TiO2 | GaAs,InP,Si,quartz,SiC,GaN | 2,3inch phi,non-standard size wafer |
| Organic film coating | photoresist, polyimide, etc | GaAs,InP,Si,quartz,SiC,GaN | 2,3inch phi |
Features
- Substrate temperature of SiO2 deposition with plasma CVD is up to 400 degC.
- Substrate temperature of SiO2 deposition with sputtering is up to 200 degC.
- Coating no damage and low dielectric constant organic film is possible.
Options
- Anti-Reflection film formation using high-controllable deposition equipment
- (It is possible to deposit the film with low reflectivity in broad range of wavelengths.)
Example
| ex) | The following figure is the reflectivity of Anti-Reflection film deposited on 10mm sq. InP-substrate. (It is measured by our relative reflectance type spectroscopic reflection measuring equipment.) |
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| Notes : | This content may be subject to change without notice. These stated pattern features and structures are representative and not guaranteed. Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
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