Metal deposition
NTT-AT provides various types of metal deposition services by using our equipment, such as Resistance heating, EB evaporation, and Sputtering.
Specifications
| Equipment |
Available metals |
Available wafers |
Available sizes |
| Resistance heating |
Au, Cr, Au-based alloys |
GaAs,InP,Si,quartz,SiC,GaN |
2inch phi, non-standard size wafer (<2inch phi) |
| Electron beam evaporation |
Ti, Pt, Au, Cr, AuGe, Al, Ni |
GaAs,InP,Si,quartz,SiC,GaN |
2,3,4,6inch phi,non-standard size wafer |
| Sputtering |
Au, W, WSiN, Cu, Al |
GaAs,InP,Si,quartz,SiC,GaN |
2,3inch phi |
Features
- EB evaporation achieves higher purity film deposition compared to Resistance heating.
- Sputtering is suitable to prevent the disconnection caused by step metalization.
Options
- Metal deposition using two-layer resist method (lift-off)
- Metal etching
- Semiconductor etching with metal mask
- Patterning with Au plating
- * Related technology : Please see "Process service for MEMS devices on Si substrate"
- Submicron order electrode fabrication
Examples (SEM images)
| ex1) |
The following patterns are fabricated on some substrates using two-layer resist method with reduced projection exposure and metal laminate deposition with EB evaporation. |
| ex2) |
The following metal pattern is fabricated on Si substrate with resist patterning and Au plating. (metal thickness : 10micron) |
(thickness = 10micron) |
| Notes : |
This content may be subject to change without notice.
These stated pattern features and structures are representative and not guaranteed.
Actual pattern features and structures are determined by the conditions and make-up of the samples and the required pattern structures, etc. |
