GaN Epitaxial Wafer
The Gate to the Future Semiconductor World
Feature
NTT-AT is pleased to announce that we have started to provide GaN epitaxial wafer.
Thanks to the new fabrication technique developed by NTT laboratories, the high production yield ratio has been achieved.
Thanks to the new fabrication technique developed by NTT laboratories, the high production yield ratio has been achieved.
Specification
AFM Image of HEMT Epi Surface
C-V Profile in AlGaN/GaN HEMT Structure
Sheet Resistance Uniformity in AlGaN/GaN HEMT
![[data]Number of points:28, Average measurement:408.7 ohm/sq., Max. value:414.4ohm/sq., Min. value:403.0ohm/sq., Variation in measurement:2.789%, Std. dev. from average:2.89ohm/sq.](im_epitaxial_004.gif)
Standard fabrication process
- Formulate crystal growth conditions
- Substrate cleaning
- Expitaxial growth
- Non destructive inspection of crystal quality by X-ray diffraction
Other optional inspection services are available to meet your needs
- Thickness uniformity
- Composition uniformity
- Sheet resistance
- Mobility
- AFM
- Surface inspection
NTT-AT is pleased to "customize" our GaN epi-wafer according to your needs.
Please let us know your required layer structure and quantity.
Category
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