GaN Epitaxial Wafer

Power devices using GaN are expected to be the "green" devices that will support the low carbon society of the future.

Through its GaN epitaxial wafer technology, NTT-AT is helping to bring an early realization of an energy saving generation.

The GaN power devices as the next generation power devices enable high output, high voltage, high frequency, and low loss exceeding the limitations of Si power devices.

NTT-AT's competitive edge

Able to provide various kinds of substrate

Si	Sapphire	SiC	GaN
2-6"	2-4"	2-4"	2"

Very flexible to meet wide range of required quantity

Small quantity for prototype production
Larger quantity for mass production needs

Mass production needs are supported by our partnership with Mitsubishi Chemical corporation.
(Click here to view the press release for the further reference.)

Able to provide 6 inch GaN on Silicon

Good wafer quality

Click here to download brochure of AlGaN/GaN HEMT on 6 inch Si (PDF:82KB)
Click here to download example inspection data (PDF:90KB)

We can also provide device manufacturing and material analysis.

Application examples

RF applications such as power amplifier
Vehicle power devices
Power electronics such as power supplies, DC/DC converter, etc.
Environment resistant devices

Benefits of using GaN

High power
High frequency
High efficiency
Low power consumption, energy saving
High-temperature robustness
Exceed the limitations of current Si power devices

AlGaN/GaN HEMT epi structure (example)

Cap Layer
Material	GaN
Doping	Doped or un-doped
Thickness	0 - 5 (nm)
Barrier
Material	AlGaN with or without AlN spacer
Doping	Doped or un-doped
Al-content	10 - 50%
Thickness	< ~50 (nm)
Buffer
Material	(Al)GaN
Thickness	1 - 3 (µm)
Substrate
Si (2-6")	Sapphire (2-4")	SiC (2-4")	GaN (2")

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