GaN Epitaxial Wafer

NTT-AT provides GaN epitaxial wafers with high mobility for electronic devics

• GaN epitaxial wafers using various substrates (Sapphire, Si,SiC, GaN)
• Able to provide large size substrate (up-to 6 inch with Si substrate)
• Widely accepted by the electronic device market
• Novel fabrication technique based on the cutting-edge techniques of NTT Laboratories

Epi	Size	Substrate
AlGaN/GaN HEMT epi	2 - 6 inch	Sapphireh
	2 - 6 inch	Si
	2 - 4 inch	SiC
	2 inch	GaN

• Power switching device for power amplifier and inverter (power circuit) for portable base station, etc.
• MMIC devices, etc. for high frequency devices
• Voltage conversion devices which can be operated under high-temeprature environment with low power consumption voltage
• Able to achieve energy saving and protable size electrical devices, etc.

AFM Image of HEMT Epi Surface

C-V Profile in AlGaN/GaN HEMT Structure

Sheet Resistance Uniformity in AlGaN/GaN HEMT

Standard fabrication process

1. Formulate crystal growth conditions
2. Substrate cleaning
3. Expitaxial growth
4. Non destructive inspection of crystal quality by X-ray diffraction

Other optional inspection services are available to meet your needs

• Thickness uniformity
• Composition uniformity
• Sheet resistance
• Mobility
• AFM
• Surface inspection

NTT-AT is pleased to "customize" our GaN epi-wafer according to your needs.
Please let us know your required layer structure and quantity.