GaN Epitaxial Wafer
The Gate to the Future Semiconductor World
Features
NTT-AT provides GaN epitaxial wafers with high mobility for electronic
devics
- GaN epitaxial wafers using various substrates (Sapphire, Si,SiC, GaN)
- Able to provide large size substrate (up-to 6 inch with Si substrate)
- Widely accepted by the electronic device market
- Novel fabrication technique based on the cutting-edge techniques of NTT Laboratories

Lineup
| Epi | Size | Substrate |
|---|---|---|
| AlGaN/GaN HEMT epi | 2 - 6 inch | Sapphireh |
| 2 - 6 inch | Si | |
| 2 - 4 inch | SiC | |
| 2 inch | GaN |
Application
- Power switching device for power amplifier and inverter (power circuit) for portable base station, etc.
- MMIC devices, etc. for high frequency devices
- Voltage conversion devices which can be operated under high-temeprature environment with low power consumption voltage
- Able to achieve energy saving and protable size electrical devices, etc.
Specifications
AFM Image of HEMT Epi Surface

C-V Profile in AlGaN/GaN HEMT Structure

Sheet Resistance Uniformity in AlGaN/GaN HEMT
![[data]Number of points:28, Average measurement:408.7 ohm/sq., Max. value:414.4ohm/sq., Min. value:403.0ohm/sq., Variation in measurement:2.789%, Std. dev. from average:2.89ohm/sq.](im_epitaxial_004.gif)
Standard fabrication process
- Formulate crystal growth conditions
- Substrate cleaning
- Expitaxial growth
- Non destructive inspection of crystal quality by X-ray diffraction
Other optional inspection services are available to meet your needs
- Thickness uniformity
- Composition uniformity
- Sheet resistance
- Mobility
- AFM
- Surface inspection
NTT-AT is pleased to "customize" our GaN epi-wafer according to your needs.
Please let us know your required layer structure and quantity.
