TECHNO-FRONTIER 2022
Join NTT-AT at TECHNO-FRONTIER 2022.
This year at TECHNO-FRONTIER 2022 NTT-AT will showcase 'GaN HEMT epiwafers'.
We look forward to seeing you in TECHNO-FRONTIER 2022.
Please stop by our booth.
About TECHNO-FRONTIER 2022
Date | July 20-22, 2022 |
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Location | TOKYO BIG SIGHT East Hall 1-3 |
Organizar | Japan Management Association (JMA) |
Website | https://www.jma.or.jp/tF/en/index.html |
Details
GaN HEMT epiwafers
Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies.
NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.