GaN HEMT epiwafers
GaN HEMT epiwafers
Image of GaN HEMT epiwafers

GaN HEMT epiwafers with low leakage current based on our original buffer growth technique


Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics.  The products are used worldwide by major cutting-edge semiconductor device companies.

NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer. 

High uniformity among wafers by precise control of growth conditions 

High breakdown voltage and low leakage current by unique buffer layer growth technology

Excellent two-dimensional electron gas by precise control of growth conditions

Due to its high quality, this product is well regarded by our customers worldwide.

Gan HEMT epiwafers Inquiry


Leakage Current Density

GaN Epiwafer_Leak current density

NTT-AT's competitive edge

Able to provide various kinds of substrate

Si Sapphire SiC GaN
2-8" 2-3" 2-4" 2-4"

Very flexible to meet wide range of required quantity

  • Small quantity for prototype production
  • Larger quantity for mass production needs

Able to provide 8 inch GaN on Silicon

  • Good wafer quality
  • Click here to download brochure of AlGaN/GaN HEMT on 6 inch Si (PDF:82KB)
  • Click here to download example inspection data (PDF:90KB)
    We can also provide device manufacturing and material analysis.

Able to provide InAlN HEMT structure

  • Detailed specifications click here to download brochure of InAlN/GaN HEMT (PDF:385KB)

Able to provide 4 inch GaN on SiC and 8 inch GaN on Si

  • RF applications such as power amplifier
  • Vehicle power devices
  • Power electronics such as power supplies, DC/DC converter, etc.
  • Environment resistant devices

Benefits of using GaN

  • High power
  • High frequency
  • High power efficiency
  • Low power consumption, energy saving
  • High-temperature robustness
  • Exceed the limitations of current Si power devices


Specifications / Details

AlGaN/GaN HEMT epi structure (example)

Cap Layer
Material GaN
Doping Doped or un-doped
Thickness 2 (nm)
Material AlGaN
Al content ~25 (%)
Thickness ~ 20 (nm)
Material GaN
Thickness ~300 (nm)
Doping C-doping
Thickness 1- 4 (μm)
1) The thickness of cap layer can be adjusted according to the requirements.
2) The thickness of barrier layer and Al composition can be adjusted according to the requirements.
3) The AlN spacer layer can be inserted as well
Sheet resistance: ~300 Ohm/sq. 1), ~400 Ohm/sq. 2)
1) with AlN spacer, 2) without AlN spacer
Sheet carrier density:~ 1013 (cm-2)
Electron mobility:> ~ 2000 cm2/Vs
Breakdown voltage3) :> 200 V (for RF), ~ 1000 V (for power)
3)influenced by device structure

Comparison with other companies products

GaN devices have higher breakdown voltage and higher power efficiency compared with Si devices, and are capable of reducing the size of high-power systems and RF systems.  
We accept GaN epitaxial wafer orders for small volume prototyping
Mass production is available.
Epitaxial growth on Si, SiC, Sapphire and GaN substrates is available.
NTT-AT also provides process services (device prototyping including MEMS devices and etching services) and material analysis services.

Sales history

Over the past 10 years, NTT-AT has sold GaN epitaxial wafers to more than 100 customers including enterprises, research institutes, and universities.

Product Inquiry

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