GaN HEMT epiwafers
GaN HEMT epiwafers
Image of GaN HEMT epiwafers

GaN HEMT epiwafers with low leakage current, enabled by our original buffer growth technique

Various HEMT structures available. Low cost and fast delivery.
Take a look at NTT-AT's HEMT structures for Power applications (on 6 inch Si)

Benefits of using GaN

Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. At the device level, GaN devices exceed limitations of the conventional Si devices. GaN devices can achieve very high power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.

  • 5G-related RF devices, such as power amplifier
  • High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
  • Durable and reliable devices in harsh environments
  • High-end sensor devices

What we do

For device manufacturers

NTT-AT provides high-performance and high-quality GaN HEMT epitaxial wafers with:

  1. High epi-layer uniformity, achieved by precise controls of growth conditions,
  2. High breakdown voltage and low leakage current, acheived by our unique optimized buffer layer,
  3. Excellent two-dimensional electron gas(2DEG)properties, acheived by precise control of growth conditions,
  4. Low RF loss achieved by optimized interlayer growth techniques, and 
  5. Clean surface with minimal particles, leading to high device production yields.
epitaxial_03.jpg
Structure
Over the past 10 years, NTT-AT GaN epitaxial wafers have good track record for both industrial and academic customers.

Gan HEMT epiwafers Inquiry

Features

Leakage Current Density

GaN Epiwafer_Leak current density
 

Production flexibility

Very flexible to meet wide range of production volumes

Small quantity for prototyping
Larger quantity for mass production needs

Able to provide various kinds of substrate

Si Sapphire SiC GaN
2-8" 2-3" 2-6" 2-4"

Epitaxial growth on Si, SiC, Sapphire and GaN substrates is available.
8 inch GaN on Silicon is also available with the same quality as 6 inch cases on request.

  • Click here to download a leaflet of AlGaN/GaN HEMT on 6 inch Si (PDF:82KB)
  • Click here to download an inspection data (PDF:90KB)
  • We can also provide device manufacturing and material analysis.
  • Foundry and material analysis services
    NTT-AT also provides process services (including MEMS device prototyping, and etching services) and material analysis services.

InAlN HEMT structure

  • Detailed specifications: click here to download a leaflet of InAlN/GaN HEMT (PDF:385KB)
Dependent on stock level, delivery may be delayed. Please inquire.

PAGETOP

Specifications / Details

HEMT structure for Power application (on 6 inch Si)

Low cost and fast delivery.
Various HEMT structures available.
Click the “part number” and contact us to inquire on the current status of its stock availability.
Part Number AlGaN Barrier AlN Channel Back Barrier
Content Thickness Spacer
SEE61K22025S25G 0.20 25nm 1nm 250nm -
SEE61K22227S20G 0.22 27nm 1nm 200nm -
SEE61K22227S20A 0.22 27nm 1nm 200nm
SEE61K22227S30A 0.22 27nm 1nm 300nm
SEE61K22227S30G 0.22 27nm 1nm 300nm -
SEE61K22520S30G 0.25 20nm 1nm 300nm -
SEE61K22520N40G 0.25 20nm - 400nm -
SEE61K22520N35G 0.25 20nm - 350nm -
SEE61K22520N30G 0.25 20nm - 300nm -
SEE61K22526N35A 0.25 26nm - 350nm
SEE61K22526N35G 0.25 26nm - 350nm -
SEE61K22527N35G 0.25 27nm - 350nm -
epitaxial_01.jpg
Cap Layer
Material GaN
Thickness 2 (nm)
Barrier
Material AlGaN
Al content 20~25 (%)
Thickness 20~ 27 (nm)
Channel
Material GaN
Thickness 200~400 (nm)
Buffer
Doping C-doping
Thickness ~3900 (nm)
Substrate
Silicon 1mm thickness
Features
Sheet resistance: 350~400 ohm/sq. (w/ AlN spacer), 450~500 ohm/sq. (w/o AlN spacer)
Electron Mobility: ~ 1700 to 1900 cm2/Vs
FWHM (002): <800 arcsec
FWHM (102): <1400 arcsec
Breakdown voltage: 800 V – 1000 V (depending on the device structure)
Bowing value: < 50 um

Customization is also available;
- Following parameters can be changed accordingly:
1) AlN spacer insertion to control 2DEG characteristics,
2) Barrier spec can be modified to adjust to required 2DEG characteristics,
3) Channel layer thickness, and
4) Cap layer thickness.
If you require other specifications,  please feel free to contact us for futher information. We are more than pleased to offer solutions.


Product Inquiry

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