Join NTT-AT at ISPSD 2016.
This year at ISPSD 2016 (The 28th International Symposium on Power Semiconductor Devices and ICs) NTT-AT will showcase 'GaN Epitaxial Wafer', 'Semiconductor Process Service'.
We look forward to seeing you in ISPSD 2016.
Please stop by our booth.
About ISPSD 2016
June 12–16, 2016
||Zofin Palace, Prague, Czech Republic
Free (Limited to those who participate in international conference)
article on exhibition
GaN HEMT epiwafers
Power devices using GaN are expected to be the "green" devices that will support the low carbon society of the future.
Through its GaN epitaxial wafer technology, NTT-AT is helping to bring an early realization of an energy saving generation.