ICNS2017
Join NTT-AT at ICNS2017 (12th International Conference on Nitride Semiconductors).
This year at ICNS2017 (12th International Conference on Nitride Semiconductors) NTT-AT will showcase 'GaN HEMT epiwafers'.
We look forward to seeing you in ICNS2017 (12th International Conference on Nitride Semiconductors).
Please stop by our booth.
About ICNS2017
| Date | July 24-28, 2017 |
|---|---|
| Location | Strasbourg Convention Center, France |
| Organizar | European Materials Research Society |
| Website | http://www.european-mrs.com/meetings/icns-12-12th-international-conference-nitride-semiconductors  |
| Admission | Euro 400 |
Details
Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies.
NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.
