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ISPSD 2019

ISPSD 2019

Join NTT-AT at ISPSD 2019.

This year at ISPSD 2019 (The 31th IEEE International Symposium on Power Semiconductor Devices and ICs) NTT-AT will showcase 'GaN HEMT epiwafers'.
We look forward to seeing you in ISPSD 2019.
Please stop by our booth.

About ISPSD 2019

Date May 19–23, 2019
Location Shanghai Marriott Hotel Parkview
Website http://www.ispsd2019.com/dct/page/1


article on exhibition
  • GaN HEMT epiwafers
    GaN HEMT epiwafers with low leakage current based on our original buffer growth technique

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