Join NTT-AT at ICNS-13 (13th International Conference on Nitride Semiconductors).
This year at ICNS-13 NTT-AT will showcase 'GaN HEMT epiwafers'.
We look forward to seeing you in ICNS-13.
Please stop by our booth.
|Date||July 7-12, 2019|
|Location||Hyatt Regency Bellevue|
|Organizar||Materials Research Society|
Our gallium nitride (GaN) HEMT epiwafer products are well known for their high breakdown voltage with low leakage current and excellent two dimensional electron gas (2DEG) characteristics. The products are used worldwide by major cutting-edge semiconductor device companies.
NTT-AT provides excellent GaN HEMT epitaxial wafers for device manufacturers, with high uniformity and high breakdown voltage which are achieved by controlling the growth conditions precisely and by using a unique buffer layer.