ISPSD 2025
Booth# No. 28 Kumamoto-jo Hall 3rd Floor
Join NTT-AT at ISPSD 2025.
This year at ISPSD 2025 (The 37th International Symposium on Power Semiconductor Devices and ICs) NTT-AT will showcase 'GaN HEMT epiwafers', etc.
We look forward to seeing you in ISPSD 2025.
Please stop by our booth.
About ISPSD 2025
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Date
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June 1-5, 2025
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| Location |
Kumamoto-jo Hall, Kumamoto, Japan |
| Organizar |
International Symposium on Power Semiconductor Devices and ICs |
| Website |
https://www.ispsd2025.com/  |
Details
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article on exhibition |
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nitride semiconductor epitaxial wafer
Power devices using nitride semiconductors are expected to be green devices that support the future low-carbon society.
NTT-AT contributes to the early realization of energy conservation with its nitride semiconductor epitaxial wafer manufacturing technology.
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Power supply unit with GaN LED street light
Significant reduction in standby power with high energy-saving effect
GaN-equipped LED streetlights expected for a decarbonized society
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USB fast charger with GaN
Your smartphone, laptop, and AC adapter make your bag heavy.
From now on, this one is OK!
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