ISPSD 2025

This year at ISPSD 2025 (The 37th International Symposium on Power Semiconductor Devices and ICs) NTT-AT will showcase 'GaN HEMT epiwafers', etc.
We look forward to seeing you in ISPSD 2025.
Please stop by our booth.

• nitride semiconductor epitaxial wafer
  Power devices using nitride semiconductors are expected to be green devices that support the future low-carbon society.
  NTT-AT contributes to the early realization of energy conservation with its nitride semiconductor epitaxial wafer manufacturing technology.
• Power supply unit with GaN LED street light
  Significant reduction in standby power with high energy-saving effect
  GaN-equipped LED streetlights expected for a decarbonized society
• USB fast charger with GaN
  Your smartphone, laptop, and AC adapter make your bag heavy.
  From now on, this one is OK!